Industry News

Crocus Technology announce the acquisition of NXP Semiconductors' MRAM patent portfolio Date: 29 August 2011

Crocus Technology, a leading developer of magnetic semiconductors, today announced the acquisition of NXP Semiconductors' MRAM patent portfolio..

Toshiba to use MRAM in HDD Date: 17 August 2011

"MRAMs will make it possible to take further advantage of NAND flash memories and HDDs, whose access performances are low," said Kiyoshi Kobayashi, president of Toshiba's Semiconductor and Storage Products Company..

Toshiba Hynix Date: 13 July 2011

Hynix Semiconductor Inc. (‘Hynix’, www.hynix.com) and Toshiba Corporation (‘Toshiba’) today announced that they have agreed to strategic collaboration in the joint development of Spin-Transfer Torque Magnetoresistance Random Access Memory (MRAM), a fast emerging next generation memory device..

Hynix, Toshiba team up on MRAM Date: 13 July 2011

Hynix Semiconductor Inc. and Toshiba Corp. have agreed to develop spin-transfer torque magnetoresistence RAMs together with both saying that the technology is an important next-generation non-volatile memory..

Crocus Introduces Breakthrough Magnetic-Logic-UnitT (MLU) Technology Date: 22 June 2011

MLU extends Thermally Assisted SwitchingT architecture to enable advanced logic and memory functions.

Russia backs MRAM startup in $300m deal Date: 17 May 2011

Crocus Technology Inc., a developer of MRAM technology, and Rusnano, a nano-technology investment fund, have closed an agreement to create an MRAM manufacturing company, with a combined investment totaling $300 million....

Everspin expands MRAM to automotive applications Date: 03 May 2011

Last week, Everspin introduced the AEC-Q100 MRAM products for automotive applications, available in x 8, x 16 and serial SPI interfaces..

Spin Transfer Technologies Announces First Orthogonal Spin Transfer MRAM Devices Using MTJ Read-Out Date: 17 November 2010

Spin Transfer Technologies is pleased to announce at the 55th Annual Conference on Magnetism and Magnetic Materials the first STT-MRAM device....

China researchers claim faster MRAM Date: 27 August 2010

The basic idea is to switch magnetic domains "halfway" rather than to completely reverse their magnetic orientation, which the researchers at Tsinghua University (Beijing) claim still enables MRAMs to store binary bits, but at much faster switching speeds and using a fraction of the energy normally required..

Perpendicular MRAMs challenge flash Date: 24 August 2010

Magnetic random access memory (MRAM) stores information magnetically, but has so far achieved relatively low densities compared to charge-based memories like flash..

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