(Dublin, Ireland)
– Magnetic Solutions Limited (MSL) today announced that a leading European developer of next
generation MRAM has placed an order for its MRT2000 magnetic annealing system, to be used to
process wafers used in the development of next generation MRAM.
First generation MRAM is unlikely to offer the scaling to smaller size deemed to be necessary
for MRAM to become widespread. The path to a fully scalable MRAM requires innovative
developments so that the writing scheme allows for reduction in the MTJ area. Conventional
MRAM uses current generated magnetic fields to switch the magnetization direction. This
method tends to disturb neighbouring bits and as the MTJ becomes smaller with cell size
reduced below 0.1 µm, higher currents are required to effect the switching resulting in
greater disturbance of neighbouring bits.
Two approaches are being taken in the development of next generation MRAM. These are
thermally assisted switching (TAS) during the write procedure. This approach relies
on the strong temperature dependence of the magnetic switching field. The smaller the
particle the greater is its temperature dependence. A quick current pulse generates heat
in the metallic layers of the MTJ thereby reducing the switching field in the storage layer.
This should make it possible to write at reduced current. The switching is temperature driven
resulting in reduced write current and less errors as adjacent bits are not affected.
The second approach is what is known as spin polarized current induced switching (CIS).
When a current flows through a magnetic material it becomes spin polarized. When this current
hits another magnetic layer it generates a torque that can be large enough to induce a
complete reversal of the magnetization. The benefits envisaged by developers are (i) no more
addressing errors, as only the selected memory cell is subject to the write current; (ii)
doubling of the memory density by eliminating one of the write lines; (iii) the potential
for highly parallel addressing, resulting in ultra fast memories; (iv) the potential for
extremely small cell size as the thermal stability limit materials requirements are now
independent of the current induced switching parameters.
The MRT Series of magnetic annealing technology has been designed to process wafers
using both approaches now being pursued by MRAM developers.
David Hurley CEO of Magnetic Solutions said today that “We are delighted to have been
selected by this new customer. The work is very exciting as it shows a clear pathway to
bringing high density, non-volatile MRAM memory to market in a short timeframe. We look
forward to putting the experience of our engineers and scientists to work developing
annealing tools optimised for this leading edge work being done by this company.”
About Magnetic Solutions
Magnetic Solutions, a privately held company based in Dublin, Ireland with offices
in the USA, Korea, Japan and Taiwan, is a leading developer of process technology
used in the manufacture of magneto-electronic devices such as MRAM, a non-volatile
memory chip, GMR sensors used in data storage.
Since its introduction in 2000, the MRT1000/2000 system has become the industry
leading magnetic annealing technology for MRAM providing exceptional reliability,
low cost of ownership, fast cycle times and is used by leading semiconductor
companies in the USA, Europe, Korea and Japan.
http://www.magnetic-solutions.com
